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1SS367
SILICON EPITAXIAL SCHOTTKY BARRIER DIODE
Features * Low forward voltage
PINNING PIN 1 2 DESCRIPTION Cathode Anode
2
Applications * High Speed Switching
1
S3
Top View Marking Code: "S3" Simplified outline SOD-323 and symbol
Absolute Maximum Ratings (Ta = 25 OC) Parameter
Maximum (Peak) Reverse Voltage Reverse Voltage Average Forward Current Maximum (Peak) Forward Current Surge Current (10 ms) Power Dissipation Junction Temperature Operating Temperature Range Storage Temperature Range
Symbol VRM VR IO IFM IFSM Ptot TJ Topr Ts
Value 15 10 100 200 1 200 125 - 40 to + 100 - 55 to + 125
Unit V V mA mA A mW
O
C C C
O
O
Characteristics at Ta = 25 OC
Parameter Forward Voltage at IF = 5 mA at IF = 100 mA Reverse Current at VR = 10 V Total Capacitance at f = 1 MHz Symbol VF Max. 0.3 0.5 20 40 Unit V
IR CT
A pF
1SS367
IF - VF
300m 100m Forward Current IF (A) 30m 10m 3m 1m 300 100 30 10 0 0.1 0.2 0.3 0.4 Forward Voltage VF (V) 0.5
Ta=100C
1m 300 100 Reverse Current IR (A) 30 10 3 1
IR - VR
Ta=100C 75C 50C
75C 50C 25C 0C -25C
25C
0C
300n 100n 30n 10n 0 2 4 12 10 6 8 Reverse Voltage VR (V) 14
-25C
40
CT-VR
f=1MHz Ta=25C Power Dissipation Ptot (mW) 240 200 160 120 80 40 0
Ptot - Ta
Mounted on a glass epoxy circuit board of 20*20mm, pad dimension 4*4 mm
Capacitance CT (pF)
30
20
10
0 0.3 1 10m 30m 0.1 Reverse Voltage VR (V) 3 10
0
75 25 100 50 125 Ambient Temperature Ta (C)
150
1SS367
PACKAGE OUTLINE
Plastic surface mounted package; 2 leads SOD-323
A c
HE D A
E
bp
UNIT mm
A 1.10 0.80
bp 0.40 0.25
C 0.15 0.00
D 1.80 1.60
E 1.35 1.15
HE 2.80 2.30

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